| PART |
Description |
Maker |
| 2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
| 2SC4686A 2SC4686 E000979 |
From old datasheet system
NPN TRIPLE DIFFUSED PLANAR TYPE (TV DYNAMIC FOCUS HIGH VOLTAGE SWITCHING AMPLIFIER APPLICATIONS)
TV DYNAMIC FOCUS APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS
NPN TRIPLE DIFFUSED PLANAR TYPE (TV DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING, AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5460 EE08122 |
NPN TRIPLE DIFFUSED TYPE (DYNAMIC FOCUS/ HIGH VOLTAGE SWITCHING/ AMPLIFIER APPLICATIONS)
NPN TRIPLE DIFFUSED TYPE (DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING, AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GALI-74 |
Surface Mount Monolithic Amplifier 50з, High dynamic range, DC to 1 GHz 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Surface Mount Monolithic Amplifier 50? High dynamic range, DC to 1 GHz
Surface Mount Monolithic Amplifier 50/ High dynamic range/ DC to 1 GHz
|
Mini-Circuits
|
| V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| XMGG7-20B3 |
From old datasheet system
Surface Mount High Dynamic Range Mixer 3400-3600 MHz, Upconverter, High IP3
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 1-1123624-5 |
Dynamic Series Connectors; DYNAMIC D-3200 HDR H 9P K-XXX ( AMP )
|
Tyco Electronics
|
| 1-1318117-3 |
Dynamic Series Connectors; DYNAMIC D-2100 TAB HSG 3P F/H ( AMP )
|
Tyco Electronics
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| MAX5581AEUP MAX5732BUTN MAX5732AUTN MAX5874EGKTD M |
Buffered, Fast-Settling, Quad, 12-/10-/8-Bit, Voltage-Output DACs SERIAL INPUT LOADING, 3 us SETTLING TIME, 12-BIT DAC, PDSO20
32-Channel, 16-Bit, Voltage-Output DACs with Serial Interface SERIAL INPUT LOADING, 20 us SETTLING TIME, 16-BIT DAC, QCC56
14-Bit, 200Msps, High-Dynamic-Performance, Dual DAC with CMOS Inputs PARALLEL, WORD INPUT LOADING, 0.014 us SETTLING TIME, 14-BIT DAC, QCC68
Buffered, Fast-Settling, Octal, 12/10/8-Bit, Voltage-Output DACs PARALLEL, WORD INPUT LOADING, 3 us SETTLING TIME, 10-BIT DAC, PDSO24
12-Bit, 500Msps Interpolating and Modulating Dual DAC with CMOS Inputs PARALLEL, WORD INPUT LOADING, 12-BIT DAC, QCC68
3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs PARALLEL, WORD INPUT LOADING, 0.011 us SETTLING TIME, 14-BIT DAC, QCC68
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
